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Q-Memory Documentation

Revolutionary dual-parameter hardware memory design optimized for quantum machine learning parameter storage

Q-Memory is an advanced hybrid memory system that combines different technologies to create dual-parameter storage optimized for quantum machine learning applications. The system stores quantum circuit parameters through independent control of two physical parameters.

Dual-Parameter Storage

Up to 10.4 bits per cell - Independent θ (resistance) and φ (capacitance) parameters

Perfect for storing paired quantum gate angles (RY, RZ)

Ultra-Fast Checkpointing

Write: 100ns per cell, Read: 50ns

10,000× faster quantum parameter persistence vs SSD storage

Non-Volatile

10 years data retention

Persistent quantum parameter storage without power

High Endurance

Up to 10⁹ write cycles

Handles frequent parameter updates during quantum training

Memory TypeBits/CellTechnologyEnduranceSpeedQ-Store Compatible
NAND Flash3-4 bitsFloating gate3K-10KSlow (ms)Limited
SSD (Zarr)32/paramNAND100K writesMedium (50ms)Default
Q-Memory Phase 05 bitsReRAM1B cyclesFast (100ns)Yes
Q-Memory Phase 1 (Hybrid)10.4 bitsQ-Memory tech50M cyclesFast (100ns)Excellent
Q-Memory Phase 2 (Production)10.4 bitsQ-Memory tech1B cyclesUltra-fast (sub-µs)Optimal
  • 10,000× faster quantum parameter checkpointing vs SSD storage
  • 2× parameter density with dual-parameter encoding (Phase 1+)
  • 100× lower idle power consumption (under 50mW vs 5W SSD)
  • Near-zero training overhead (0.0001%) for quantum ML workloads

Q-Memory technology comprises 12 distinct patentable inventions across Phase 0, Phase 1, and Phase 2, representing significant innovations in quantum-classical hybrid computing, analog memory systems, and quantum machine learning infrastructure.

Guides

Quick start, integration and implementation examples

View Guides →